SI9529DY siliconix s-49520erev. d, 18-dec-96 1 dual n- and p-channel 2.5-v (g-s) rated mosfet product summary v ds (v) r ds(on) ( ) i d (a) n channel 20 0.03 @ v gs = 4.5 v 6 n - channel 20 @ v gs = 2.5 v 5.2 p channel 12 0.05 @ v gs = 4.5 v 5 p - channel 12 0.074 @ v gs = 2.5 v 4.1 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet d 1 d 1 g 1 s 1 s 2 g 2 d 2 d 2 p-channel mosfet absolute maximum ratings ( t a = 25 c unless otherwise noted ) parameter symbol n-channel p-channel unit drain-source voltage v ds 20 12 v gate-source voltage v gs 8 8 v continuous drain current (t j = 150 c) a t a = 25 c i d 6 5 continuous drain current (t j = 150 c) a t a = 70 c i d 4.8 4.0 a pulsed drain current i dm 20 20 a continuous source current (diode conduction) a i s 1.7 1.7 maximum power dissipation a t a = 25 c p d 2.0 w maximum power dissipation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg 55 to 150 c thermal resistance ratings parameter symbol n- or p- channel unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 10 sec. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70161.
SI9529DY 2 siliconix s-49520erev. d, 18-dec-96 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 0.6 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a p-ch 0.6 v gate body leakage i gss v ds =0v v gs = 8v n-ch 100 na gate - body leakage i gss v ds = 0 v , v gs = 8 v p-ch 100 na v ds = 20 v, v gs = 0 v n-ch 1 zero gate voltage drain current i dss v ds = 12 v, v gs = 0 v p-ch 1 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 55 c n-ch 5 a v ds = 12 v, v gs = 0 v, t j = 55 c p-ch 5 on state drain current b i d( ) v ds 5 v, v gs = 4.5 v n-ch 20 a on - state drain current b i d(on) v ds 5 v, v gs = 4.5 v p-ch 20 a b v gs = 4.5 v, i d = 6 a n-ch 0.023 0.03 drain source on state resistance b r ds( ) v gs = 4.5 v, i d = 5 a p-ch 0.039 0.05 drain - source on - state resistance b r ds(on) v gs = 2.5 v, i d = 5.2 a n-ch 0.028 v gs = 2.5 v, i d = 4.1 a p-ch 0.051 0.074 forward transconductance b g f v ds = 10 v, i d = 6 a n-ch 24 s forward transconductance b g fs v ds = 9 v, i d = 5 a p-ch 16 s diode forward voltage b v sd i s = 1.7 a, v gs = 0 v n-ch 0.75 1.2 v diode forward voltage b v sd i s = 1.7 a, v gs = 0 v p-ch 0.75 1.2 v dynamic a total gate charge q n-ch 21 40 total gate charge q g n-channel p-ch 21 40 gate source charge q v ds = 10 v, v gs = 4.5 v, i d = 6 a n-ch 2.9 nc gate - source charge q gs p-channel v 6v v 45v i 5a p-ch 3 nc gate drain charge q d v ds = 6 v, v gs = 4.5 v, i d = 5a n-ch 6.5 gate - drain charge q gd p-ch 6 turn on delay time t d( ) n-ch 30 60 turn - on delay time t d(on) nch l p-ch 20 40 rise time t n - ch anne l v dd = 10 v, r l = n-ch 70 140 rise time t r dd , l i d 1 a, v gen = 4.5 v, r g = 6 p-ch 40 80 turn off delay time t d( ff) p-channel v 10 v r 10 n-ch 70 140 ns turn - off delay time t d(off) v dd = 10 v, r l = 10 i d 1 a , v gen = 4.5 v , r g = 6 p-ch 100 200 ns fall time t f i d 1 a , v gen 4 . 5 v , r g 6 n-ch 30 60 fall time t f p-ch 60 120 source drain reverse recovery time t i f = 1.7 a, di/dt = 100 a/ s n-ch 70 100 source - drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s p-ch 67 100 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
SI9529DY siliconix s-49520erev. d, 18-dec-96 3 typical characteristics (25 c unless otherwise noted) n-channel 0 4 8 12 16 20 012345 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) 0 1 2 3 4 5 0 5 10 15 20 25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 0 50 100 150 0 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 0 500 1000 1500 2000 2500 3000 024681012 0 5 10 15 20 0 0.5 1.0 1.5 2.0 2.5 3.0 55 c v gs = 2.5 v c rss c oss c iss v gs = 4.5 v t c = 125 c v ds = 10 v i d = 6 a v gs = 4.5 v i d = 6 a 2 v 1.0 v 1.5 v v gs = 4.5, 4, 3.5, 3, 2.5 v 25 c
SI9529DY 4 siliconix s-49520erev. d, 18-dec-96 typical characteristics (25 c unless otherwise noted) n-channel source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 0 50 100 150 0 0.02 0.04 0.06 0.08 0.10 02468 t j = 150 c t j = 25 c 2 1 0.1 0.01 i d = a i d = 250 a 0.2 0.4 10 0.6 0.8 1.0 1.2 1 10 3 10 2 11030 10 1 10 4 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.01 0 0.1 24 30 6 12 18 11030 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 20 variance (v) v gs(th)
SI9529DY siliconix s-49520erev. d, 18-dec-96 5 typical characteristics (25 c unless otherwise noted) p-channel output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) 0 4 8 12 16 20 012345 0 1 2 3 4 5 0 5 10 15 20 25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 0 50 100 150 0 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 0 500 1000 1500 2000 2500 3000 024681012 0 5 10 15 20 0 0.5 1.0 1.5 2.0 2.5 3.0 55 c v gs = 2.5 v c rss c oss c iss v gs = 4.5 v t c = 125 c v ds = 6 v i d = 5 a v gs = 4.5 v i d = 5 a v gs = 5, 4.5, 4, 3.5, 3 v 1.5 v 2 v 25 c 2.5 v 1 v
SI9529DY 6 siliconix s-49520erev. d, 18-dec-96 typical characteristics (25 c unless otherwise noted) p-channel source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0.6 0.4 0.2 0.0 0.2 0.4 0.6 50 0 50 100 150 0 0.02 0.04 0.06 0.08 0.10 02468 t j = 150 c t j = 25 c 2 1 0.1 0.01 i d = 5 a i d = 250 a 0.4 0.6 10 0.8 1.0 1.2 1.4 1 10 3 10 2 11030 10 1 10 4 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.01 0 0.1 24 30 6 12 18 11030 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 20 variance (v) v gs(th)
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